Infineon IPG20N06S2L-35A 35A OptiMOS Power MOSFET for High-Efficiency Power Conversion

In the realm of modern power electronics, achieving high efficiency and reliability is paramount. The Infineon IPG20N06S2L-35A, a 35A OptiMOS Power MOSFET, stands out as a critical component engineered to meet these demanding requirements. Designed for a broad spectrum of power conversion applications, this MOSFET combines low on-state resistance (RDS(on)) with exceptional switching performance, making it an ideal choice for designers seeking to optimize their systems.

A key highlight of the IPG20N06S2L-35A is its remarkably low RDS(on) of just 3.5 mΩ (max) at 10 V. This ultra-low resistance directly translates to minimized conduction losses, allowing for higher efficiency and reduced heat generation during operation. Whether used in switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, or automotive systems, this characteristic ensures that more power is delivered to the load with less wasted energy.

Furthermore, the device is built on Infineon’s advanced OptiMOS technology platform, which enhances its switching capabilities. The low gate charge (Qg) and low figure-of-merit (FOM) contribute to faster switching speeds and reduced driving losses. This is particularly beneficial in high-frequency applications where switching losses often dominate overall power dissipation. The result is a cooler, more efficient, and more compact power design.

The MOSFET’s 35A continuous current rating and 60V drain-source voltage (VDS) make it robust enough for a wide operating range, including 12V and 24V systems commonly found in industrial and automotive environments. Its strong avalanche ruggedness and 100% repetitive avalanche tested design ensure high reliability under stressful conditions, providing engineers with confidence in system durability.

Packaged in the space-saving D2PAK (TO-263) format, the IPG20N06S2L-35A also supports efficient thermal management. The package offers a low thermal resistance path, enabling effective heat dissipation without necessitating excessive heatsinking or board space.

ICGOOODFIND: The Infineon IPG20N06S2L-35A OptiMOS MOSFET is a superior solution for high-efficiency power conversion, delivering outstanding performance through low RDS(on), fast switching, and high reliability.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS Technology, Power Conversion